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128-layer flash memory: China just broke through, SK Hercules to accelerate mass production

via:驱动之家     time:2020/4/23 17:24:50     readed:1048

Changjiang storage recently announced that it has conquered 128 layer stacked 3D QLC flash memory technologyThe capacity of a single chip is 1.33tb, creating the world's first in terms of storage density per unit area, I / O transmission speed and capacity of a single chip, ranking first in the world's first queue level.

currently, the whole flash memory industry is fully turning to 100 layers stack, of which toshiba, western data is 112 layers, mercer, SK helis is 128 layers, samsung is 136 layers, Intel achieve 144 layers.

China's breakthrough obviously made the international giants uneasy and began to speed up.Samsung recently announced that it is developing 3D flash memory with 160 layers and above, will become the foundation of the seventh generation v-nand flash memory.

During today's first quarter financial meeting,Sk Hynix from South Korea also confirmed that it will accelerate the 128 layer 3D flash presence and put it into mass production in the second quarter of this year.

Sk Hynix's main flash memory is 96 layer stacking. 128 layer technology has been announced in the middle of last year. It supports two types of flash memory, TLC and QLC. At that time, SK Hynix claimed that the stacking density and capacity density were the highest. The capacity of a single chip was 1TB (128GB), integrating more than 360 billion flash memory cells.

Sk Hynix started to ship 128 layers of flash memory in small quantities at the end of last year, which was also shown on CES at the beginning of this year Both high - end SSD using this flash, the models are gold P31 and platinum P31, both of which are in the form of m.22110. They are controlled by their own master. The maximum continuous reading and writing is 3.5gb/s, 3.2gb/s, and the maximum writing life is 2TB / 1500tbw.

Coming up, SK Hercules will also hit 176 layers of flash memory.

The 128 layer flash memory of Changjiang storage did not disclose the specific mass production time, only later this year. You don't need to be too strict about this. You think the Yangtze River storage will only talk about PPT and slow mass production.

On the one hand, it will take a certain time for any manufacturer to conquer technology and put into mass production. SK Hynix's 128 layer flash memory was announced in the middle of last year, but it still hasn't been mass produced. It takes nearly a year before and after. Even in the fourth quarter of this year, the mass production of Changjiang storage is no slower than that.

On the other hand, our weak foundation in the semiconductor industry is obvious to all. It is a miracle that the Yangtze River storage can leap from 64 layers to 128 layers, from a generation behind to the first-class.

Otherwise, why do Samsung and SK Hynix all say they want to speed up?


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