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China Semiconductor new era: world's largest Gan plant built in Suzhou

via:驱动之家     time:2020/9/19 23:45:05     readed:131

On September 19, innosecco Suzhou third generation semiconductor base held the equipment moving in ceremony. This means that innosecco's Suzhou third generation semiconductor base has started from the plant construction stage to the preparation stage for mass production, marking the formal completion of the world's largest Gan plant, and also marking the beginning of a new era in China's semiconductor innovation history.


After the completion of the project, it will become the world's largest R & D and production platform for the third generation semiconductor industry chain integrating R & D, design, epitaxial production, chip manufacturing and testingMonthly production of 65000 8-inch silicon-based Gan wafersThe products will provide core electronic components for the independent innovation and development of strategic emerging industries such as 5g mobile communication, data center, new energy vehicles, unmanned driving, and mobile phone fast charging.


Innosecco Suzhou third generation semiconductor base is located in FenHu high tech Zone, Wujiang District, Suzhou City, Jiangsu Province245000 square meters, which is a key project in Jiangsu Province, with a total investment of more thanRMB 6 billion。 The project is expected to enter the trial production stage by the end of this year.

The relevant person in charge of innosecco said,The through-line production of Gan power chip production line fills the gap of high-end semiconductor device industry in China, and also means that the technical bottleneck restricting the third generation semiconductor industry in China has been broken through.


About innosecco:

Innoseco was established at the end of 2015. It is an enterprise specializing in the development and manufacturing of third-generation silicon-based Gan chips. Since its establishment, it has successively introduced nearly 100 top talents from world-class and well-known semiconductor enterprises, established an international first-class Semiconductor R & D team, carried out independent research and development work, and formed independent controllable core technology, and has applied for more than 290 domestic and foreign cores Patents.


As the world's leading manufacturer of silicon-based Gan power devices, innoseco adopts the IDM mode integrating R & D, design, production, manufacturing and testing, and the technology of the whole industrial chain is independently controllable. The business model has obvious advantages of high efficiency and low cost, which is superior to international friends. At the same time, the core technology of the whole industry chain can be controlled independently, which provides the best platform for the rapid iterative innovation of the company's products.

Innosecco's main products are 30v-650v Gan power devices, power modules and RF devices, etc., and its product coverage is the first in the world's gallium nitride enterprises. The company's IDM industrialization mode and the first 8-inch silicon-based gallium nitride power and RF device mass production line make the company's products have market advantages of high performance, low cost and high reliability.


Innosecco actively establishes and improves the ecosystem of the third generation semiconductor based on silicon-based gallium nitride, and cooperates with many international and domestic IC design companies, magnetic material companies, advanced packaging plants and other manufacturers to develop supporting systems for silicon-based gallium nitride and establish an independent and controllable ecosystem.

Especially in the field of fast charging, Inoseco

Next, Inoseco will cooperate with more enterprises in the region to further form an industrial chain cluster to help domestic semiconductors realize the foundation of semiconductor industry in the Yangtze River Delta


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