IT Home October 12 On October 12th, Samsung is announced that 14 nanometers DRAM based on extreme ultraviolet (EUV) optical technology have begun.
After the first EUV DRAM shipped last year, the number of layers of EUV increased to five layers at this stage, which will provide better solutions for DDR5.
JOOYOYOUNYOUNYOUNYOUNG LEE, Samsung Electronics and Technical Lead, said: "Through the key patterned innovation technology, we have been leading the DRAM market in the past three years. Today, Samsung is building through multi-storey EUV Another technical milestone, the technology achieves 14 nanometers - this is a feat that traditional fluorinated argon modes (ARF) crafts cannot be realized. On this basis, we will continue to be more than 5G, AI and virtual world needs more High performance and larger capacity data drive calculations provide the most differential memory solutions. "
Samsung achieves ultra-high bit density by adding five EUV layers in 14 nanometer DRAM, while the productivity of the overall wafer has increased by about 20%. In addition, 14 nm process contribute to the reduction of nearly 20% of power consumption compared to the previous generation DRAM.
According to the latest DDR5 standard, Samsung's 14-nanometer DRAM can bring 7.2Gbps ultra-high speed, which is twice as much as the 3.2Gbps of the previous generation DDR4.
IT House understands that Samsung plans to extend its 14-nanometer DDR5 product portfolio to support data centers, supercomputers, and enterprise server applications. In addition, Samsung is expected to increase its 14-nanometer DRAM chip density to 24GB to better meet the rapid growth of global IT systems.