Recently, Some Japanese media said that Huawei will publish its 3D DRAM technology developed in cooperation with the Institute of Microelectronics of the Chinese Academy of Sciences during the VLSI Symposium 2022 to demonstrate various memory-related demonstrations.
According to foreign media, Huawei's 3D DRAM technology released this time is CAA configuration transistor 3D DRAM technology based on indium gallium zinc IGZO-FET material, which has excellent temperature stability and reliability.
In Huawei's previously released memory-related article - "Huawei Kirin take you a picture to understand the memory", Huawei said that with the shrinkage of chip size, DRAM process microcosm will become more and more difficult, "Moore's Law" to the limit, so major manufacturers are studying 3D DRAM as a solution to continue the use of DRAM.
At IEDM 2021, the team of the Institute of Microelectronics of the Chinese Academy of Sciences and Huawei HiSilicon proposed a new vertical circular channel device structure (CAA). It is reported that this structure reduces the device area and supports multi-layer stacking. By connecting the upper and lower CAA devices directly, the size of each memory cell can be reduced to 4F2.