Domestic storage chips are booming, representing companies including Hefei Changxin (DRAM) and Wuhan Yangtze River Storage.

A few days ago, Oeri, a South Korean research institution, analyzed in a report thatThe gap between China and South Korea DRAM chip technology is about 5 years, and NAND flash memory chips have been shortened to 2 years.

It is reported that the Yangtze River Storage began to mass produce 64 -story 3D NAND in August 2021, only two years later than Samsung and SK Hynix. As for the more advanced ultra -200 -layer 3D flash memory, Samsung and SK Hynix need to wait until early next year, and it is expected that the Yangtze River Storage will do this in 2024.

However, the report believes that a variable is that if Apple really introduces the chip stored by its products such as the iPhone, it may play a role in breaking the industrial chain pattern.