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"Mother of the Chip" suffers! The United States blocked EDA to China: not so simple

via:芯智讯     time:2022/8/15 6:03:06     readed:103

On August 12, local time, the Ministry of Commerce Industry and Security (BIS) disclosed a new export restriction temporary final rules in the Federal Bulletin, involving advanced semiconductors, turbine engines and other fields.

The ban is necessary for an EDA/ECAD software necessary for integrated circuits with GAAFET (surrounding grid polar field effect crystal) structure, ultra -wide procedure semiconductor materials represented by diamond and oxidation, including stress gain burning (PGC) Four technologies have implemented new export control.


GaAFET related EDA software

EDA/ECAD refers to the electronic computer auxiliary software for designing, analyzing, optimizing and verifying the performance of integrated circuit or printing circuit board. As early as August 3, Xinzhi reported & ldquo; The United States will break the news about EDA tools related to GAAFET technology & rdquo; The announcement of the ban has further confirmed the news.


As the successor of FinFET, GAAFET is considered a key technology for mass production of 3nm and below.

At the end of June this year, Samsung has announced the first 3nm process based on GAaFET technology. TSMC is currently mass -produced 3nm based on FinFET technology and is expected to introduce GaaFET technology in 2nm.

That is,The US ban will limit the export of EDA software designed by 3nm and below advanced semi -guide system process chips. This will limit the breakthrough of Chinese chip design manufacturers to advanced processes of 3nm and below.

BIS is currently soliciting public opinions to determine which specific functions of ECAD are particularly useful when designing gallium arsenidal effects crystal tubing circuits to ensure that the US government can effectively implement the regulations.

Related articles "It is said that the United States will break the EDA tool related to GAA technology related to China"

Oxidation 氧 and diamond stone

As for the broadband gap semiconductor material oxidation (GA2O3) and diamond (including silicon carbide SIC): nitride and silicon carbide are the main materials for producing complex microwave, millimeter -header or high -power semiconductor devices, and may create more complex devices to make more complex devices , Able to bear higher voltage or temperature.

At present, compounds represented by silicon carbide and nitride are very high attention. They will play traditional silicon devices that cannot be achieved in future high -power, high temperature, and high -pressure applications.

Especially in the future of the three emerging applications (cars, 5G, and the Internet of Things) in the future, there will be very broad development prospects. However, the oxidation has a wider forbidden band than its silicon carbide and nitride, making this species semiconductor in a higher power application in a higher power application.

Oxidation 氧 is a kind of wide -ranging semiconductor, with bandwidth EG = 4.9EV, far exceeding silicon carbide (about 3.4EV), nitride (about 3.3EV) and silicon (1.1EV). Therefore, it has broad application prospects in terms of optoelectronic devices and high -power scenarios.

Although the migration rate and thermal conductivity of oxidation and thermal conductivity are low, especially the main shortcomings of thermal conductivity, relatively speaking, these disadvantages will not have much effect on the characteristics of power devices. Speed on the electric field strength.

△ GA2O3's crystalline forms are confirmed that & alpha;, & beta;, & gamma;, & delta;, & epsilon; of which & beta; at the time, most of the research reports related to GA2O3's crystal growth and physical properties used & beta. ;structure. & beta; -ga2O3's breakdown electric field strength is about 8mv/cm, which is more than 20 times that of SI, which is equivalent to more than twice the SIC and GAN.

Compared to silicon materials, nitride, silicon carbide, etc., the width of diamond semiconductor materials is as high as 5.45 EV. The biggest advantage is the higher load migration rate (cavity: 3800 cm2v-1s-1, electronic: 4500 CM 2V-1S-1), higher breakdown electric field (> 10 MVCM-1), larger thermal conductivity (22 WK-1CM-1).

The advantage of this material is the highest thermal guidance rate and the highest body material migration rate in nature, which can meet the needs of future high -power, strong electric field and anti -radiation. It is an ideal material for making power semiconductor devices. There are broad application prospects in rail transit and other fields.

However, according to Li Chengming, a professor at the New Materials Technology Research Institute of Beijing University of Science and Technology, it is still a large distance to achieve commercial applications at present. High cost and small size of diamond materials are the main obstacles to restrict the development of Vajrayana power electronics.

For example, the biting density density of nitrogen-mixed diamond-mixed diamond-mounted sheet (6 mm x 7 mm) in CVD can currently be as low as 400 CM-2; The density density is still as high as nearly 107 CM-2 magnitude, and the high defect density is still a challenge.

Stress gain burning

Pressure gain burning (PGC) technology may increase the efficiency of gas turbine engine by more than 10%, which may affect aerospace, rockets and hypersonic missile systems.

PGC technology uses various physical phenomena, including resonance pulse combustion, fixed -capacity combustion and burst, thereby generating effective pressure in the combustion room while consuming the same combustion.

BIS is currently unable to confirm whether any engine in production uses this technology, but there are already a lot of research pointing to potential production.

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