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China's storage stands up: World giants like Samsung lag behind

via:超能网     time:2022/12/3 11:00:35     readed:85

At the 2022 Flash Memory Summit (FMS), Changjiang Storage officially released the fourth-generation 3D TLC NAND flash chip based on Crystal Stack 3.0 (Xtacking 3.0) architecture, named X3-9070. Compared to its predecessor, the X3-9070 has higher storage density and faster I/O speed.

According to Tech Insights, Yangtze Storage's X3-9070 is already in mass production. In addition to being used on the TPLUS7100 series SSD, it is also being used on Hikvision's CC700 2TB SSD, the first 200+ layer 3D NAND flash solution to reach the retail market. Ahead of Samsung, Micron, SK Hynix and other manufacturers.

According to Changjiang Storage, the I/O transmission rate of the X3-9070 reaches 2400 MT/s, which conforms to the ONFI 5.0 specification and improves the performance by 50% compared to the previous generation. Thanks to the crystal stack 3.0 architecture, X3-9070 becomes the flash memory particle with the highest memory density in the history of Changjiang Storage, capable of achieving 1Tb (128GB) storage capacity in a smaller single chip. Using 6-plane design, compared with the general 4-plane performance improved by more than 50%, at the same time reduce power consumption by 25%, energy efficiency ratio improved, the cost is lower.

As storage giants, Micron, SK Hynix and Samsung have launched 200+ layer 3D NAND flash solutions this year. One of the earliest was Micron, which in May announced the launch of the industry's first 232-layer 3D TLC NAND flash memory, saying it would start production in late 2022. It uses the CuA architecture, uses NAND's string stacking technology, and has an initial capacity of 1 terabyte (128GB).

In August, SK Hynix announced that it had successfully developed the world's first industry-leading 238-layer NAND flash and had sent samples of the 238-layer 512Gb TLC 4D NAND flash to its partners.

Last month, Samsung announced that it has started mass production of the 8th-generation V-NAND, a 1Tb (128GB) TLC 3D NAND flash memory chip with 236 layers.

中国存储站起来:长江晒新闪存芯片 SSD强行超车 三星等世界巨头落后

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