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Two major factories announce 218-layer flash memory: Copying China's Yangtze River? But we have 232 floors!

via:快科技     time:2023/3/31 16:05:11     readed:172

Western Data and Kai Xia have jointly announced some technical details of the next generation of 3D NAND flash memory, this time stacked up to 218 floors.

The new flash memory contains four planes and applies advancedwafer bonding, lateral shrink technologyAnd strike a balance between horizontal contraction and vertical contraction,The storage density is more than 50% higher than the previous generation, reaching 1Tb(128GB).

It is worth mentioning that,Xisu and Kaixia have developed a new CBA technology, that is, CMOS directly Bonded to Array. Each CMOS wafer and unit array wafer are independently manufactured using the most suitable technology process, and then bonded together, thus greatly improving the storage density and I/O speed.

Yes that's right, no problem with the Changjiang storage crystal Stack Xtacing 3.0 technology.

According to official figures,The new flash's NAND I/O interface speeds up to 3.2Gbps, a 60% improvement over the previous generation, while improving write performance and read latency by 20%, the overall performance and availability to a new level.

In addition to the process, architecture innovation, the cost is further optimized.

Flash type, TLC, QLC can be.

However, Xishu and Kaixia did not disclose when the new 218-layer flash memory will be commercially available and which products will be used first.

西数、铠侠宣布218层堆叠3D闪存:还不如中国长江存储!

In fact, Cheung Kong's Crystal Stack 3.0 flash, released last year, already has 232 layers and 2400MT/s I/O speed and is used in the TPLUS7100 SSD series, but for reasons you know, it's not publicly advertised.

Last July,Micron is the first company to release 232 layers of flash memoryHowever, due to weak demand, officials said it would not be commercially available for the time being.

And then,SK Hynix announced a 238-floor stack, while Samsung is believed to have achieved 236 floors.

Now it seems that NAND flash this round of competition, the West number, Kai Xia not only the slowest speed, but also the most backward.

西数、铠侠宣布218层堆叠3D闪存:还不如中国长江存储!
Changjiang Storage 232 layers of flash memory

西数、铠侠宣布218层堆叠3D闪存:还不如中国长江存储!
Micron 232 layers of flash drive

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