Western Digital and Armour jointly announced some technical details of the next generation of 3D NAND flash memory, this time stacked to 218 layers.

The new flash memory consists of four planes (plane), uses advanced wafer bonding (wafer bonding) and transverse contraction (lateral shrink) technology, and achieves a balance between horizontal and vertical shrinkage, and the storage density is more than 50% higher than that of the previous generation, reaching 1Tb (128GB).

It is worth mentioning that the West, armor developed a new CBA technology, that is, the CMOS is directly bonded on the array (CMOS directly Bonded to Array), each CMOS wafer, unit array wafers are made independently using the most suitable technology, and then bonded together, thus greatly improving the storage density and speed.

Yes, that's right, the proper vision of the Yangtze River memory stack Xtacing 3.0 technology.

According to official data, the transmission speed of the new flash memory's NAND I Pot O interface reaches 3.2Gbps, which is as much as 60% higher than that of the previous generation. At the same time, the write performance and read latency have been improved by 20%, and the overall performance and availability have reached a new level.

Coupled with the innovation of process and architecture, the cost aspect is also further optimized.

In terms of flash memory type, both TLC and QLC are OK.

However, Xisu and the armoured Man did not disclose when the 218 layers of new flash memory will be used in commercial use and which products will be used first.

However, Xisu and the armoured Man did not disclose when the 218 layers of new flash memory will be used in commercial use and which products will be used first.

Last July, Micron first unveiled 232 layers of flash memory, but officials said it would not be available for commercial use for the time being due to weak market demand.

Subsequently, SK Hynix announced a stack of 238 layers, which Samsung generally thought had achieved 236 layers.

Subsequently, SK Hynix announced a stack of 238 layers, which Samsung generally thought had achieved 236 layers.

Changjiang storage 232 layer flash memory

Meguiar 232 layer flash memory

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