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Power consumption reduced by 34% samsung released the second generation of 3 nm process: after 4 years straight to 1.4 nm

via:快科技     time:2023/5/10 15:02:01     readed:109

Fast technology May 10, the news, Samsung semiconductor business executives said a few days ago to take 5 years to catch up with Taiwan Semiconductor Manufacturing Co., LTD., to achieve this goal cannot do without advanced technology, last June Samsung announced the world's first 3nm GAA process, a few days ago the company has launched the second generation of 3nm process, is expected to be in 2024 mass production.

Samsung's 3nm technology is radical. Compared to TSMC's 2nm technology, which will move to the conservative GAA transistor, Samsung used the GAA transistor technology on the first generation 3nm technology, and it is MBCFET multi-bridge field effect transistor, known as SF3E, which is 3GAE technology.

功耗降低34% 三星发布第二代3nm工艺:4年后直奔1.4nm

The announcement is the SF3 process, formerly known as the 3GAP high performance process,Samsung notes that compared to the SF4 (4nm LPP) process, the technology offers a 22 percent increase in speed, or a 34 percent reduction in power consumption and a 21 percent reduction in area for the same power consumption and transistor density.

功耗降低34% 三星发布第二代3nm工艺:4年后直奔1.4nm

This is a significant improvement, but Samsung compared the second generation 3nm to 4nm without directly mentioning the changes between the two 3nm processes.

功耗降低34% 三星发布第二代3nm工艺:4年后直奔1.4nm

According to Samsung's roadmap, mass production of the SF3 technology is expected in 2024, followed by a souped-up SF3P, or 3GAP+, in 2025.

Then there are the SF2 and SF2P processes with 2nm nodes,Even the SF1.4 process for the 1.4nm node will be planned in 2027.

功耗降低34% 三星发布第二代3nm工艺:4年后直奔1.4nm

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