Samsung Electronics announced that it has started mass production of DDR5 DRAM chips based on the 12nm process.

New memorySingle capacity 16Gb(2GB), maximum speed 7.2Gbps(equivalent frequency 7200MHz), equivalent to processing two 30GB ultra HD movies per second.

Compared to the previous generation of products,Power consumption of 12nm DDR5 is reduced by up to 23% while wafer productivity is increased by 20%, especially for servers and data centers.

Samsung revealed that the development of the 12nm level process is based onA new type of high K material, can improve the capacitance of the battery, so that the data signal appears obvious potential difference, so that it is easier to accurately distinguish.

At the same time, Samsung has also made new achievements in reducing operating voltage and noise.

Notably, Samsung also completed a compatibility evaluation of 16Gb DDR5 DRAM with AMD processor platforms in December.