Yangtze River storage has made 3D NAND flash memory 232 layers stacked, storage density 15.47Gb per square millimeter, and transmission speed up to 2400MT/s, no problem, the world's first, the results have been banned by the United States to stop, limited to 128 layers, but we certainly will not sit still.
According to reports, Yangtze River storage is developing a mysterious new flash memory, although very helpless, but also quite a "transfer of wood" wonderful.
This new flash memory on the one hand only 128 layers, is likely to be the previous generation of crystal stack Xtacking 2.0 architecture, but the interface speed is the fastest 2400MT/s, that is, the capacity is small, but the performance will be relatively high, but the specific indicators are not known for the time being.
The reason why I can do this,Also thanks to the unique crystal stack architecture of Changjiang Storage.
It uses twin-wafer bonding, two separate wafers processing the memory unit and the peripheral circuit, the latter can be replaced to achieve this low-density, high-speed flash memory.
In fact, it is said that the 232 layers of flash memory stored in the Yangtze River is not stacked at one time, but 128 layers and 125 layers are stacked twice and then combined, removing a certain redundancy, and finally getting 232 layers.
This also means that even 128 more layers will not lead to waste of existing technology.
However, due to the particularity of the event, this new type of flash memory high probability can never be officially confirmed.
It is also said that,Changjiang Storage's 512Gb flash memory chip in May from $1.35 to $1.4, and then all the way up to $1.50, $1.6, can not stop the rhythm.
Foreign media said that the confidence of Yangtze River storage came from government subsidies and the gaps left in key areas after Micron's procurement restrictions, but this argument is quite sour at first glance.